| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UF640 | 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM converter topologies. • RDS(ON) =0.18Ω@VGS = 10V. \n• Ultra Low gate charge (typical 43nC) \n• Low reverse transfer capacitance (CRSS = typical 100 pF) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness; | UTC 友顺 |   | |
UF640 | 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | |
UF640 | 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：140.57 Kbytes Page：5 Pages | UTC 友顺 | | |
18A, 200V, 0.20Ω, N-CHANNEL POWER MOSFET These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance,and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640-Q suitable for resonant and PWM converter topologies. RDS(ON) < 0.2Ω @ VGS=10V, ID=10AFast switching capabilityAvalanche energy specifiedImproved dv/dt capability, high ruggedness; | UTC 友顺 | | ||
18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640V suitable for resonant and PWM converter topologies. • RDS(ON) =0.18Ω@VGS = 10V. \n• Low reverse transfer capacitance (CRSS = typical 100 pF) \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness; | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：220.58 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：220.58 Kbytes Page：5 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.81674 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：140.57 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：140.57 Kbytes Page：5 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.76966 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：242.29 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：274.73 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：220.58 Kbytes Page：5 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：140.57 Kbytes Page：5 Pages | UTC 友顺 | | ||
18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 文件：140.57 Kbytes Page：5 Pages | UTC 友顺 | | ||
18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET 文件：214.85 Kbytes Page：5 Pages | UTC 友顺 | | ||
18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET 文件：214.85 Kbytes Page：5 Pages | UTC 友顺 | | ||
18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET 文件：214.85 Kbytes Page：5 Pages | UTC 友顺 | | ||
18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET 文件：214.85 Kbytes Page：5 Pages | UTC 友顺 | | ||
18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET 文件：214.85 Kbytes Page：5 Pages | UTC 友顺 | | ||
High Current Transistors(PNP Silicon) High Current Transistors PNP Silicon | ONSEMI 安森美半导体 | | ||
High Current Transistors High Current Transistors PNP Silicon | MOTOROLA 摩托罗拉 | | ||
SWITCHMODE??Power Rectifirers DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua | MOTOROLA 摩托罗拉 | | ||
ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere) VOLTAGE 20 to 60 Volts CURRENT 6.0 Ampers FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. | PANJIT 強茂 | | ||
DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes) VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los | PANJIT 強茂 | |
UF640产品属性
- 类型
描述
- Vdss(V)：
200
- Vgss(V)：
20
- Id(A)：
18
- Package：
TO-220/TO-220F/TO-26...
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC |
21+ |
TO-263 |
52000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UTC/友顺 |
25+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
|||
UTC/友顺 |
21+ |
TO-220 |
6856 |
百域芯优势 实单必成 可开13点增值税 |
|||
UTC |
24+ |
TO220 |
6000 |
深圳原装现货价格优势 |
|||
UTC/友顺 |
22+ |
TO-220 |
9000 |
原装正品,支持实单! |
|||
VBsemi |
25+ |
TO220 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
NH |
24+ |
TO220F |
33487 |
郑重承诺只做原装进口现货 |
|||
UTC |
24+ |
TO-252 |
5000 |
全新原装正品,现货销售 |
|||
UTC/友顺 |
25+ |
TO252 |
55000 |
UTC/友顺UF640G-TN3-R即刻询购立享优惠#长期有货 |
|||
UTC(友顺) |
2447 |
TO-220F(TO-220IS) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
UF640规格书下载地址
UF640参数引脚图相关
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UF640数据表相关新闻
UF13A12-BTHR
UF13A12-BTHR
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UF3N25ZL-TO252R-TG
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UF80A12-BTHR
2021-9-26UF5404
UF5404，当天发货0755-82732291全新原装现货或门市自取.
2020-8-16
DdatasheetPDF页码索引
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