18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640V suitable for resonant and PWM converter topologies. • RDS(ON) =0.18Ω@VGS = 10V. \n• Low reverse transfer capacitance (CRSS = typical 100 pF) \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET

文件：214.85 Kbytes Page：5 Pages

18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET

文件：214.85 Kbytes Page：5 Pages

18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET

文件：214.85 Kbytes Page：5 Pages

18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET

文件：214.85 Kbytes Page：5 Pages

18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET

文件：214.85 Kbytes Page：5 Pages

High Current Transistors(PNP Silicon)

High Current Transistors PNP Silicon

High Current Transistors

High Current Transistors PNP Silicon

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 6.0 Ampers FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los