ADVANCED POWER MOSFET

The UTC UF634 is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS(ON), improved gate charge and so on. • Lower Input Capacitance \n• Improved Gate Charge \n• Lower Leakage Current: 10μA (MAX.) @ VDS = 250V \n• Avalanche Rugged Technology \n• Rugged Gate Oxide Technology \n• Extended Safe Operating Area;

ADVANCED POWER MOSFETADVANCED POWER MOSFET

文件：185.15 Kbytes Page：6 Pages

ADVANCED POWER MOSFET

 DESCRIPTION The UTC UF634-HC is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS(ON), improved gate charge and so on.  FEATURES * RDS(ON) ≤ 0.45 Ω @ VGS=10V, ID=4.0A * Lower Input Capacitance * Improved Gate Charge * Lower Leakage Curren

ADVANCED POWER MOSFET

 DESCRIPTION The UTC UF634-HC is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS(ON), improved gate charge and so on.  FEATURES * RDS(ON) ≤ 0.45 Ω @ VGS=10V, ID=4.0A * Lower Input Capacitance * Improved Gate Charge * Lower Leakage Curren

ADVANCED POWER MOSFET

 DESCRIPTION The UTC UF634-HC is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS(ON), improved gate charge and so on.  FEATURES * RDS(ON) ≤ 0.45 Ω @ VGS=10V, ID=4.0A * Lower Input Capacitance * Improved Gate Charge * Lower Leakage Curren

ADVANCED POWER MOSFET

 DESCRIPTION The UTC UF634-HC is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS(ON), improved gate charge and so on.  FEATURES * RDS(ON) ≤ 0.45 Ω @ VGS=10V, ID=4.0A * Lower Input Capacitance * Improved Gate Charge * Lower Leakage Curren

ADVANCED POWER MOSFET

 DESCRIPTION The UTC UF634-HC is a N-channel Power MOSFET and it uses UTC advanced technology to provide customers with lower RDS(ON), improved gate charge and so on.  FEATURES * RDS(ON) ≤ 0.45 Ω @ VGS=10V, ID=4.0A * Lower Input Capacitance * Improved Gate Charge * Lower Leakage Curren

ADVANCED POWER MOSFET

文件：414.16 Kbytes Page：9 Pages

ADVANCED POWER MOSFET

文件：414.16 Kbytes Page：9 Pages

ADVANCED POWER MOSFET

文件：414.16 Kbytes Page：9 Pages

ADVANCED POWER MOSFETADVANCED POWER MOSFET

文件：185.15 Kbytes Page：6 Pages

ADVANCED POWER MOSFET

文件：414.16 Kbytes Page：9 Pages

ADVANCED POWER MOSFETADVANCED POWER MOSFET

文件：185.15 Kbytes Page：6 Pages

ADVANCED POWER MOSFET

文件：414.16 Kbytes Page：9 Pages

ADVANCED POWER MOSFET

文件：414.16 Kbytes Page：9 Pages

Planar Power MOSFET  (N-CH)

ADVANCED POWER MOSFET

文件：414.16 Kbytes Page：9 Pages

ADVANCED POWER MOSFETADVANCED POWER MOSFET

文件：185.15 Kbytes Page：6 Pages

ADVANCED POWER MOSFET

文件：414.16 Kbytes Page：9 Pages

ADVANCED POWER MOSFETADVANCED POWER MOSFET

文件：185.15 Kbytes Page：6 Pages

ADVANCED POWER MOSFET

文件：414.16 Kbytes Page：9 Pages

ADVANCED POWER MOSFET

文件：414.16 Kbytes Page：9 Pages

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. The TS634 is a high output current dual operational