RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Features • N-channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than competitive devices • RoHS Compliant

RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

·N-Channel Enhancement Mode Device\n·RoHS Compliant\n·Lower Noise Figure than Competitive Devices\n·High Saturated Output Power\n·Lower Capacitances for Broadband Operation\n·DMOS Structure;

RF Power MOSFET Transistor

文件：235.57 Kbytes Page：3 Pages

RF Power MOSFET Transistor

文件：235.57 Kbytes Page：3 Pages

RF Power MOSFET Transistor

文件：660.97 Kbytes Page：4 Pages

RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF MOSFET Power Transistor, 100W, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF MOSFET Power Transistor, 15W, 28V 100-500MHz

Features • N-Channel Enhancement &lode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

3.0A SUPER-FAST GLASS BODY RECTIFIER

Features • Hermetically Sealed Glass Body Construction • Controlled Avalanche Characteristics • Super-Fast Switching for High Efficiency • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 90A Peak • Low Reverse Leakage Current