GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.5 Amperes)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Glass passivated junction in DO-15 package ● 1.5 ampere operation at TA=55 ¢J with no thermal runaway ● Exceeds environmental standards of MIL-S

Glass Passivated Ultra Fast Recovery Rectifier

Voltage Range 50 to 1000 V Current 1.5 Ampere Features ♦ Low forward voltage drop ♦ Fast switching for high efficiency ♦ High current capability ♦ High surge current capability ♦ Low reverse leakge current

ULTRAFAST GLASS PASSIVATION RECTI FIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes

VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Void-free Plastic in DO-15 package • 1.5 ampere operation at TA=55 OC J with no thermal runaway

超快速恢复整流器

1.5A GLASS PASSIVATED ULTRAFAST DIODE

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GLASS PASSIVATED JUNCTION ULTRAFAST RECOVERY RECTIFIERS

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GLASS PASSIVATED JUNCTION ULTRAFAST RECOVERY RECTIFIERS

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封装/外壳：DO-204AC，DO-15，轴向 包装：卷带（TR）剪切带（CT） 描述：GLASS PASSIVATED JUNCTION ULTRAF 分立半导体产品 二极管 - 整流器 - 单

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45 (Typ)

Silicon NPN Transistor High Voltage Video Output

Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: • High Voltage: VCEO = 300V Min @ IC = 5mA • Low Capacitance: Cob = 3pF Max @ VCB = 20V • High Frequency: ft = 50MHz Min @ IC = 15mA • H

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th

L-BAND SPDT SWITCH

DESCRIPTION The µPG154TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package th