RECTIFIERS

DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f

ULTRAFAST RECTIFIERS, High Efficiency, 50A

DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f

RECTIFIERS

DESCRIPTION The UES804 is specifically designed for operation In power switching circuits operating at frequencies of at least 20 KHz. FEATURES • Very Low Forward Voltage (1.15V) • Very Fast Recovery Times (50nSec) • High Surge Capability • Low Thermal Resistance • Mechanically Rugged • Bo

50A Ultra Fast Recovery Rectifier

This Ultra Fast Recovery Rectifier is packaged in DO-5 package, which has a maximum forward current of 50A.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Rectifier Diode Switching 2-Pin 50A, 400V, 50ns DO-5

The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated forward current Very Low Forward Voltage \n Very Fast Recovery Times \n High Reliability Screening Options with HR2 Suffix (ie. UES804HR2) \n Low Thermal Resistance \n Mechanically rugged \n Standard Polarity is Cathode to Case \n For Reverse Polarity, Add Suffix R (ie. UES804R) \n High Surge capacity;

Diode Switching 400V 50A 2-Pin DO-5

封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

High Efficiency, 50A

文件：157.51 Kbytes Page：2 Pages

RECTIFIERS

DESCRIPTION The UES804 is specifically designed for operation In power switching circuits operating at frequencies of at least 20 KHz. FEATURES • Very Low Forward Voltage (1.15V) • Very Fast Recovery Times (50nSec) • High Surge Capability • Low Thermal Resistance • Mechanically Rugged • Bo

RECTIFIERS

DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f

ULTRAFAST RECTIFIERS, High Efficiency, 50A

DESCRIPTION The UES804 series of ultrafast high-efficiency rectifiers is specifically designed for operation in power switching circuits operating at frequencies of 20 kHz or higher. These devices have demonstrated capability in passing power-stress testing to 25 thousand cycles with full-rated f

High Efficiency, 50A

文件：157.51 Kbytes Page：2 Pages

封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

POWER TRANSISTORS(8.0A,150-200V,60W)

8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes)

VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O •

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 × 2SC4959)