RECTIFIERS

DUCRIPTION This Series is specifically designed for operation in power switching circuits operating at frequencies of at least 20KHz. The very low forward voltage and very fast recovery time make them particularly suited for switching type power supplies. FEATURE • High Continuous Current Ratin

High Efficiency, 50A and 70A

DUCRIPTION This Series is specifically designed for operation in power switching circuits operating at frequencies of at least 20KHz. The very low forward voltage and very fast recovery time make them particularly suited for switching type power supplies. FEATURE • High Continuous Current Ratin

Rectifier Diode Switching 2-Pin 70A, 150V, 50ns DO-5 Tray

This series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz. The very low forward voltage and very fast recovery time make them particulary suited for switching type power supplies. High continuos current rating \n Very low forward voltage \n Very fast switching speeds \n High surge capacity \n Low thermal resistance \n Mechanically rugged DO-5 package;

封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

Diode Switching 150V 70A 2-Pin DO-5

封装/外壳：DO-203AB，DO-5，接线柱 包装：卷带（TR） 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

Ultra Fast Rectifier (trr less than 100ns)

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors