DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

文件：163.87 Kbytes Page：6 Pages

N- and P-Channel 30 V (D-S) MOSFET

文件：2.58056 Mbytes Page：14 Pages

DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

文件：163.87 Kbytes Page：6 Pages

N- and P-Channel 30 V (D-S) MOSFET

文件：2.58057 Mbytes Page：14 Pages

N- and P-Channel 30 V (D-S) MOSFET

文件：2.58066 Mbytes Page：14 Pages

DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)

文件：163.87 Kbytes Page：6 Pages

N- and P-Channel 30 V (D-S) MOSFET

文件：2.58065 Mbytes Page：14 Pages

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

N and P-Channel Enhancement Mode Power MOSFET

Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.9A RDS(ON)

Complementary High Density Trench MOSFET

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N- and P-Channel 30 V (D-S) MOSFET

文件：1.22669 Mbytes Page：14 Pages

Binary reduction valve

文件：99.4 Kbytes Page：1 Pages