适用于 IGBT/SiC MOSFET 的汽车类 3.75kVrms 30A 单通道功能安全隔离式栅极驱动器

The UCC5870-Q1 device is an isolated, highly configurable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections, such as shunt-resistor–based overcurrent, NTC-based overtemperature, and DESAT detection, include selectable s • Split output driver provides 30-A peak source and 30-A peak sink currents\n• Interlock and shoot-through protection with 150-ns(max) propagation delay and programmable minimum pulse rejection\n• Configurable power transistor protections \n• Shunt resistor based overcurrent and short circuit protec;

UCC5870-Q1 Functional Safety Compliant 15-A Isolated IGBT/SiC MOSFET Gate Driver with Advanced Protection Features for Automotive Applications

文件：2.85946 Mbytes Page：113 Pages

UCC5870-Q1 Functional Safety Compliant 15-A Isolated IGBT/SiC MOSFET Gate Driver with Advanced Protection Features for Automotive Applications

文件：2.85946 Mbytes Page：113 Pages

UCC5870-Q1 Functional Safety Compliant 15-A Isolated IGBT/SiC MOSFET Gate Driver with Advanced Protection Features for Automotive Applications

文件：2.85946 Mbytes Page：113 Pages

封装/外壳：36-BSSOP（0.295"，7.50mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTOMOTIVE, FUNCTIONAL SAFETY CO 集成电路（IC） 栅极驱动器

功能：栅极驱动器 包装：散装 描述：UCC5870-Q1 FUNCTIONAL SAFETY COM 开发板，套件，编程器 评估和演示板及套件

Wide bandwidth analog switch IC

■ Overview The AN5870K is a wide bandwidth analog switch IC of 300 MHz operation. It is usable for RGB signal and horizontal/vertical synchronizing signals, and it has a built-in 75 Ω driver for video signal. In addition, it has also realized a high speed operation by the adoption of CMOS process

Wide bandwidth analog switch IC

■ Overview The AN5870K is a wide bandwidth analog switch IC of 300 MHz operation. It is usable for RGB signal and horizontal/vertical synchronizing signals, and it has a built-in 75 Ω driver for video signal. In addition, it has also realized a high speed operation by the adoption of CMOS process

Silicon Power Rectifier Diode, 12 Amp

Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: • High Surge Current Capability • High Voltage Available

Photo Transistor

Features • Lensed for high sensitivity • φ5mm(T-13/4) all plastic mold type • High reliability and stable characteristics • Visible light cut-off type • With base terminal

POWER ZENERS

DESCRIPTION Fused-in-glass, metallurgically-bonded 5 watt zeners. FEATURES • 2 Times Greater Surge Rating than Conventional 10 Watt Zeners • Small Physical Size