型号 功能描述 生产厂家 企业 LOGO 操作
UCC5304DWVR

UCC5304 4-A Source, 6-A Sink Single-Channel Reinforced Isolation Gate Driver With High Noise Immunity

1 Features 1• Reinforced isolation • Single channel in DWV Package with 8.5-mm creepage distance • CMTI greater than 100-V/ns • 4-A peak source, 6-A peak sink output • Switching parameters: – 40-ns maximum propagation delay – 5-ns maximum delay matching – 5.5-ns maximum pulse-width distor

TI

德州仪器

UCC5304DWVR

UCC5304 4-A Source, 6-A Sink Single-Channel Reinforced Isolation Gate Driver With High Noise Immunity

文件:1.0252 Mbytes Page:32 Pages

TI

德州仪器

UCC5304 4-A Source, 6-A Sink Single-Channel Reinforced Isolation Gate Driver With High Noise Immunity

1 Features 1• Reinforced isolation • Single channel in DWV Package with 8.5-mm creepage distance • CMTI greater than 100-V/ns • 4-A peak source, 6-A peak sink output • Switching parameters: – 40-ns maximum propagation delay – 5-ns maximum delay matching – 5.5-ns maximum pulse-width distor

TI

德州仪器

UCC5304 4-A Source, 6-A Sink Single-Channel Reinforced Isolation Gate Driver With High Noise Immunity

1 Features 1• Reinforced isolation • Single channel in DWV Package with 8.5-mm creepage distance • CMTI greater than 100-V/ns • 4-A peak source, 6-A peak sink output • Switching parameters: – 40-ns maximum propagation delay – 5-ns maximum delay matching – 5.5-ns maximum pulse-width distor

TI

德州仪器

UCC5304 4-A Source, 6-A Sink Single-Channel Reinforced Isolation Gate Driver With High Noise Immunity

1 Features 1• Reinforced isolation • Single channel in DWV Package with 8.5-mm creepage distance • CMTI greater than 100-V/ns • 4-A peak source, 6-A peak sink output • Switching parameters: – 40-ns maximum propagation delay – 5-ns maximum delay matching – 5.5-ns maximum pulse-width distor

TI

德州仪器

UCC5304 4-A Source, 6-A Sink Single-Channel Reinforced Isolation Gate Driver With High Noise Immunity

1 Features 1• Reinforced isolation • Single channel in DWV Package with 8.5-mm creepage distance • CMTI greater than 100-V/ns • 4-A peak source, 6-A peak sink output • Switching parameters: – 40-ns maximum propagation delay – 5-ns maximum delay matching – 5.5-ns maximum pulse-width distor

TI

德州仪器

UCC5304 4-A Source, 6-A Sink Single-Channel Reinforced Isolation Gate Driver With High Noise Immunity

1 Features 1• Reinforced isolation • Single channel in DWV Package with 8.5-mm creepage distance • CMTI greater than 100-V/ns • 4-A peak source, 6-A peak sink output • Switching parameters: – 40-ns maximum propagation delay – 5-ns maximum delay matching – 5.5-ns maximum pulse-width distor

TI

德州仪器

BNC (Male) With Strain Relief To SMD Grabber Test Clips

FEATURES: • BNC, grabbers and breakout wires are molded directly to the cable for added pull strength. • BNC Cable breakouts to SMD Grabber® Test Clips for test versatility. • SMD Grabber® Test Clips features gold plated stainless steel pincer for durability and low contact resistance.

POMONA

Pomona Electronics

Security & Sound, #18-6c, BC, Shielded, CMR

Product Description Security & Sound Cable, Riser-CMR, 6-18 AWG stranded bare copper conductors with polypropylene insulation, Beldfoil® shield and PVC jacket with ripcord

BELDEN

百通

Security & Sound, #18-6c, BC, CMR

Product Description Security & Sound Cable, Riser-CMR, 6-18 AWG stranded bare copper conductors with polypropylene insulation, PVC jacket with ripcord

BELDEN

百通

24 (7/32) AWG Tinned Copper

文件:412.71 Kbytes Page:4 Pages

ALPHAWIRE

Instrument Knobs

文件:332.46 Kbytes Page:2 Pages

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更新时间:2025-12-30 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
TI(德州仪器)
24+
SOIC-8
7858
原厂可订货,技术支持,直接渠道。可签保供合同
Texas Instruments
24+
SOIC-8
12000
原装正品现货询价有惊喜
TI(德州仪器)
24+/25+
10000
原装正品现货库存价优
TI(德州仪器)
25+
N/A
6000
原装,请咨询
TI/德州仪器
25+
原厂封装
9999
TI/德州仪器
24+
SOIC-8
810
原装货
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
TI(德州仪器)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TI
25+
SOIC (DWV)
6000
原厂原装,价格优势

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    UCC3957是一个BiCMOS工艺三个或四个细胞 锂离子电池组保护装置的设计工作 与外部P沟道MOSFET。利用外部 P沟道MOSFET提供没有好处 亏损系统地在过放电状态, 保护IC以及不受损坏电池 在过充电状态。内部状态机 连续运行,保护每一个锂离子电池 充电和放电。一个单独的 过电流保护块保护电池组 过度放电电流。 如果任何电池电压超过过压阈值, 是打开相应的外部P沟道MOSFET 关闭,防止进一步的充电电流。外部 N沟道MOSFET是需要转移到这个水平 高边P沟道MOSFET。放电电流可以 仍然流经的第二个P沟道MOSFET。 同样,如果任何电池电压低于欠压 限制,第二个P沟道MOS

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    2012-12-29