型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
UCC28C56H | UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller 1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent | TI 德州仪器 | ||
UCC28C56H | UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs 1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28 | TI 德州仪器 | ||
UCC28C56H | UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller 1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent | TI 德州仪器 | ||
UCC28C56H | UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI 德州仪器 | ||
UCC28C56H | UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI1 德州仪器 | ||
UCC28C56H | UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI 德州仪器 | ||
UCC28C56H | UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI 德州仪器 | ||
UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI 德州仪器 | |||
UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI1 德州仪器 | |||
UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI 德州仪器 | |||
UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI 德州仪器 | |||
UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs 1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28 | TI 德州仪器 | |||
UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI 德州仪器 | |||
UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI1 德州仪器 | |||
UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI 德州仪器 | |||
UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller 1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent | TI 德州仪器 | |||
UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs 1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28 | TI 德州仪器 | |||
UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI 德州仪器 | |||
UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs 1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28 | TI 德州仪器 | |||
UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs 1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28 | TI 德州仪器 | |||
UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller 1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent | TI 德州仪器 | |||
UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI 德州仪器 | |||
UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs 1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc | TI1 德州仪器 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
|||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
TI/德州仪器 |
24+ |
SOIC8 |
60000 |
全新原装现货 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
||||
TI |
24+ |
con |
348907 |
优势库存,原装正品 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
11000 |
||||
恩XP |
22+ |
NA |
5000 |
原装 渠道优势 实单联系 |
UCC28C56H芯片相关品牌
UCC28C56H规格书下载地址
UCC28C56H参数引脚图相关
- w5500
- w300
- w230
- w200
- vp5
- voip技术
- viper22a
- viper22
- viper12
- vip12a
- vga接口
- v8000
- usb声卡
- usb连接器
- usb接口电路
- usb3.0
- UPS电源
- uln2003
- uei30
- udn2981
- UCC2975
- UCC2974
- UCC2973
- UCC2972
- UCC2961
- UCC2960
- UCC2956
- UCC2946
- UCC2945
- UCC2943
- UCC2941
- UCC2926
- UCC2921
- UCC2920
- UCC2919
- UCC2918
- UCC2917
- UCC2915
- UCC2913
- UCC2912
- UCC28C58QDRQ1
- UCC28C58-Q1
- UCC28C58DR
- UCC28C58
- UCC28C57LQDRQ1
- UCC28C57L-Q1
- UCC28C57LQ1
- UCC28C57LDR
- UCC28C57L
- UCC28C57HQDRQ1
- UCC28C57H-Q1
- UCC28C57HDR
- UCC28C57H
- UCC28C56LQDRQ1
- UCC28C56L-Q1
- UCC28C56LDR
- UCC28C56L
- UCC28C56HQDRQ1
- UCC28C56H-Q1
- UCC28C56HDR
- UCC28C55QDRQ1
- UCC28C55-Q1
- UCC28C55DR
- UCC28C55DGKR
- UCC28C55
- UCC28C54QDRQ1
- UCC28C54-Q1
- UCC28C54DR
- UCC28C54DGKR
- UCC28C54
- UCC28C53QDRQ1
- UCC28C53-Q1
- UCC28C53DR
- UCC28C53DGKR
- UCC28C53_V01
- UCC28C53
- UCC28C52QDRQ1
- UCC28C52-Q1
- UCC28C52DR
- UCC28C52DGKR
- UCC2897
- UCC2895
- UCC2894
- UCC2893
- UCC2892
- UCC2891
- UCC2890
- UCC2889
- UCC2888
- UCC2884
- UCC2882
- UCC2880
- UCC2858
- UCC2857
- UCC284-
- UCC284
- UCC2839
- UCC2837
- UCC283
- UCC2819
UCC28C56H数据表相关新闻
UCC37322D原装现货TI价格好
UCC37322D原装现货TI价格好
2024-9-12UCC28C40QDRQ1
UCC28C40QDRQ1
2022-5-7UCC28C43DR
交流/直流转换器 BiCMOS Low-Power Current Mode
2021-11-26UCC2946DTR进口原装正品现货
焕盛达竭诚为您提供一站式配套服务。当天下单,当天发货;
2020-10-22UCC28C45DR
Through Hole 交流/直流转换器 , Half-Bridge 交流/直流转换器 , Buck 交流/直流转换器 , 100 kHz 交流/直流转换器 , 100 W 交流/直流转换器 , TO-220-6 交流/直流转换器
2020-9-2UCC2915DP-电源控制/管理
特点 内置0.15 - W功率MOSFET 7 V至15 V操作 数字可编程电流限制从0 A到3 A 100 - mA的ICC禁用时 可编程时间 可编程启动延迟 固定2%占空比 热关断 故障输出指示灯 最大输出电流可设置为1上方的程序故障或一个完整的4的一个 电源SOIC和TSSOP,低热电阻包装 UCC3915可编程热插拔电源管理器提供了完整的电源管理,热插拔能力,断路器功能。唯一的操作设
2013-1-2
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103