型号 功能描述 生产厂家&企业 LOGO 操作
UCC28C56H

UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller

1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent

TI

德州仪器

UCC28C56H

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

TI

德州仪器

UCC28C56H

UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller

1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent

TI

德州仪器

UCC28C56H

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI

德州仪器

UCC28C56H

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI1

德州仪器

UCC28C56H

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI

德州仪器

UCC28C56H

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI1

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI

德州仪器

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI1

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI

德州仪器

UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller

1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent

TI

德州仪器

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI

德州仪器

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

TI

德州仪器

UCC28C5x-Q1 Automotive BiCMOS Low-Power Current-Mode PWM Controllers for Si and SiC MOSFETs

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: -40⁰C to 125⁰C – Device HBM classification level 2: ±2 kV – Device CDM classification level C4B: 750 V • Functional Safety-Capable – Documentation available to aid functional safety system design • 28

TI

德州仪器

UCCx8C5x BiCMOS Low-Power Current-Mode PWM Controller

1 Features • 28-V VDD recommended max operating ratings • New undervoltage lockout options to support both Si and SiC MOSFET applications • Operating frequency: 1 MHz • 50-μA Standby Current, 75-μA Maximum • Low operating current: 1.3 mA (@ fOSC = 52 kHz) • Fast, cycle-by-cycle overcurrent

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI

德州仪器

UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

TI1

德州仪器

更新时间:2025-8-9 16:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
TI/德州仪器
25+
原厂封装
10280
TI/德州仪器
24+
SOIC8
60000
全新原装现货
TI/德州仪器
25+
原厂封装
10280
TI
24+
con
348907
优势库存,原装正品
TI/德州仪器
25+
原厂封装
11000
恩XP
22+
NA
5000
原装 渠道优势 实单联系

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