丝印代码：2801EP；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

LOW-POWER BICMOS CURRENT-MODE PWM

文件：561.86 Kbytes Page：18 Pages

LOW-POWER BICMOS CURRENT-MODE PWM

文件：368.24 Kbytes Page：15 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 功能：升压，升压/降压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG CTRLR MULT TOPOLOGY 8SOIC 集成电路（IC） PMIC - 稳压器 - DC DC 开关式控制器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 功能：升压，升压/降压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG CTRLR MULT TOPOLOGY 8SOIC 集成电路（IC） DC-DC 开关控制器

丝印代码：2801EP；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

LOW-POWER BICMOS CURRENT-MODE PWM

文件：561.86 Kbytes Page：18 Pages

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM

GaAlAs on GaAs Infrared Light Emitting Diode

GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : Ie = 6 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● ø3 plastic package

POWER TRANSISTORS(10A,60V,75W)

designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

POWER TRANSISTORS(10A,60V,75W)

designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER

DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications. This package has shield effect to cut off ambient light. FEATURES • High isolation voltage (BV = 2 500