MJE2801晶体管资料
MJE2801别名:MJE2801三极管、MJE2801晶体管、MJE2801晶体三极管
MJE2801生产厂家:美国摩托罗拉半导体公司
MJE2801制作材料:Si-NPN
MJE2801性质:低频或音频放大 (LF)_功率放大 (L)
MJE2801封装形式:直插封装
MJE2801极限工作电压:60V
MJE2801最大电流允许值:10A
MJE2801最大工作频率:<1MHZ或未知
MJE2801引脚数:3
MJE2801最大耗散功率:90W
MJE2801放大倍数:
MJE2801图片代号:B-21
MJE2801vtest:60
MJE2801htest:999900
- MJE2801atest:10
MJE2801wtest:90
MJE2801代换 MJE2801用什么型号代替:BD207,BD213/60,BD607,3DD166B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE2801 | POWER TRANSISTORS(10A,60V,75W) ... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A | MOSPEC 统懋 | ||
MJE2801 | HIGH-POWER NPN SILICON TRANSISTOR HIGH-POWER NPN SILICON TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MJE2801 | BJT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) • High DC Current Gain- : hFE= 25-100@IC= 3A • Complement to Type MJE2901T APPLICATIONS • Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel. | ISC 无锡固电 | |||
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
POWER TRANSISTORS(10A,60V,75W) ... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A | MOSPEC 统懋 | |||
三极管 | MOSPEC 统懋 | |||
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM | POLYFET | |||
GaAlAs on GaAs Infrared Light Emitting Diode GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : Ie = 6 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● ø3 plastic package | PANASONIC 松下 | |||
HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications. This package has shield effect to cut off ambient light. FEATURES • High isolation voltage (BV = 2 500 | NEC 瑞萨 |
MJE2801产品属性
- 类型
描述
- Maximum Collector Emitter Voltage:
60V
- Maximum DC Collector Current:
10A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM |
23+ |
SOD-52 |
99000 |
全新原装假一赔十 |
|||
CJ |
20+ |
TO220-3L |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
MOTOROLA |
23+ |
NA |
674 |
专做原装正品,假一罚百! |
|||
MOT |
25+ |
2 |
公司优势库存 热卖中! |
||||
ST |
25+ |
TO220 |
20000 |
原装,请咨询 |
|||
SAMSUNG |
25+ |
TO-220 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
CJ/长电 |
21+ |
TO-220-3L |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
长电 |
25+23+ |
TO-220-3L |
24497 |
绝对原装正品全新进口深圳现货 |
|||
ST |
23+ |
TO220 |
16900 |
正规渠道,只有原装! |
|||
ON/安森美 |
23+ |
TO-3P |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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MJE2801规格书下载地址
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DdatasheetPDF页码索引
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