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MJE2801晶体管资料

  • MJE2801别名:MJE2801三极管、MJE2801晶体管、MJE2801晶体三极管

  • MJE2801生产厂家:美国摩托罗拉半导体公司

  • MJE2801制作材料:Si-NPN

  • MJE2801性质:低频或音频放大 (LF)_功率放大 (L)

  • MJE2801封装形式:直插封装

  • MJE2801极限工作电压:60V

  • MJE2801最大电流允许值:10A

  • MJE2801最大工作频率:<1MHZ或未知

  • MJE2801引脚数:3

  • MJE2801最大耗散功率:90W

  • MJE2801放大倍数

  • MJE2801图片代号:B-21

  • MJE2801vtest:60

  • MJE2801htest:999900

  • MJE2801atest:10

  • MJE2801wtest:90

  • MJE2801代换 MJE2801用什么型号代替:BD207,BD213/60,BD607,3DD166B,

型号 功能描述 生产厂家 企业 LOGO 操作
MJE2801

POWER TRANSISTORS(10A,60V,75W)

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

MOSPEC

统懋

MJE2801

HIGH-POWER NPN SILICON TRANSISTOR

HIGH-POWER NPN SILICON TRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE2801

BJT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) • High DC Current Gain- : hFE= 25-100@IC= 3A • Complement to Type MJE2901T APPLICATIONS • Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel.

ISC

无锡固电

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER TRANSISTORS(10A,60V,75W)

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

MOSPEC

统懋

三极管

MOSPEC

统懋

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

15.0 Watts Single Ended Package Style S02 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM

POLYFET

GaAlAs on GaAs Infrared Light Emitting Diode

GaAlAs on GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : Ie = 6 mW/sr (min.) ● Emitted light spectrum suited for silicon photodetectors ● Good radiant power output linearity with respect to input current ● ø3 plastic package

PANASONIC

松下

HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER

DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications. This package has shield effect to cut off ambient light. FEATURES • High isolation voltage (BV = 2 500

NEC

瑞萨

MJE2801产品属性

  • 类型

    描述

  • Maximum Collector Emitter Voltage:

    60V

  • Maximum DC Collector Current:

    10A

更新时间:2026-5-13 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
23+
SOD-52
99000
全新原装假一赔十
CJ
20+
TO220-3L
32970
原装优势主营型号-可开原型号增税票
MOTOROLA
23+
NA
674
专做原装正品,假一罚百!
MOT
25+
2
公司优势库存 热卖中!
ST
25+
TO220
20000
原装,请咨询
SAMSUNG
25+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!
CJ/长电
21+
TO-220-3L
30000
百域芯优势 实单必成 可开13点增值税发票
长电
25+23+
TO-220-3L
24497
绝对原装正品全新进口深圳现货
ST
23+
TO220
16900
正规渠道,只有原装!
ON/安森美
23+
TO-3P
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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