UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver

文件：1.30933 Mbytes Page：27 Pages

具有 4V UVLO 和 5V 稳压输出的 4A/6A 单通道栅极驱动器

UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

UCC27611 5-V, 4-A to 6-A Low Side GaN Driver

1 Features • Enhancement Mode Gallium Nitride FETs (eGANFETs) • 4-V to 18-V Single Supply Range VDD Range • Drive Voltage VREF Regulated to 5 V • 4-A Peak Source and 6-A Peak Sink Drive Current • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity) •

4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver

文件：355.99 Kbytes Page：22 Pages

4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver

文件：1.21185 Mbytes Page：22 Pages

4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver

文件：1.30933 Mbytes Page：27 Pages

4-A and 6-A High-Speed 5-V Drive, Optimized Single-Gate Driver

文件：1.30933 Mbytes Page：27 Pages

封装/外壳：6-WDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR LOW-SIDE 6WSON 集成电路（IC） 栅极驱动器

功能：栅极驱动器 包装：盒 描述：EVALUATION BOARD FOR UCC27611 开发板，套件，编程器 评估和演示板及套件