UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (With 4-A Peak Source and 8-A Peak Sink)

1 Features • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon • Split Output Configuration (Allows Easy and Independent Adj

采用 SON 封装、具有 5V UVLO 和分离输出的 4A/8A 单通道栅极驱动器

UCC27511 和 UCC27512 单通道高速低侧栅极驱动器器件可有效驱动金属氧化物半导体场效应晶体管 (MOSFET) 和绝缘栅双极型晶体管 (IGBT) 电源开关。UCC27511 和 UCC27512 采用的设计方案可最大程度减少击穿电流，从而为电容负载提供较高的峰值拉/灌电流脉冲，同时提供轨到轨驱动能力以及超短的传播延迟（典型值为 13ns）。UCC27511 特有 双输入设计，同一器件可灵活实现反相（IN- 引脚）和非反相（IN+ 引脚）配置。IN+ 引脚和 IN- 引脚均可用于控制驱动器输出的状态。未使用的输入引脚可用于启用和禁用功能。出于安全考虑，输入引脚上的内部上拉和下拉电 • 低成本栅极驱动器器件提供 NPN 和 PNP 离散解决方案的高品质替代产品\n• 强劲的灌电流提供增强的抗米勒接通效应性能 \n• 短暂传播延迟（典型值 13ns）\n• 4.5V 至 18V 单电源范围\n• 晶体管逻辑 (TTL) 和互补金属氧化物半导体 (CMOS) 兼容输入逻辑阈值（与电源电压无关）\n• 双输入设计（可选择反相（IN- 引脚）或非反相（IN+ 引脚）驱动器配置） \n• 当输入引脚悬空时，输出保持在低电平\n• -40°C 至 140°C 的运行温度范围\n• 6 引脚 DBV (SOT-23) 和 6 引脚 DRS（3mm x 3mm 带有外露散热焊盘的晶圆级;

UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (With 4-A Peak Source and 8-A Peak Sink)

文件：1.41448 Mbytes Page：39 Pages

Single Channel High-Speed, Low-Side Gate Driver

文件：1.60761 Mbytes Page：32 Pages

Single-Channel High-Speed Low-Side Gate Driver (with 4-A Peak Source and 8-A Peak Sink)

文件：1.61567 Mbytes Page：33 Pages

UCC27517A Single-Channel High-Speed Low-Side Gate Driver with Negative Input Voltage Capability (with 4-A Peak Source and Sink)

1 Features 1• Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions • 4-A Peak-Source and Sink Symmetrical Drive • Ability to Handle Negative Voltages (-5 V) at Inputs • Fast Propagation Delays (13-ns typical) • Fast Rise and Fall Times (9-ns and 7-ns t

UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (Based On CMOS Input Threshold With 4-A Peak Source and 4-A Peak Sink)

1 Features 1• Low-Cost, Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions • Pin-to-Pin Compatible With TI's TPS2828 and TPS2829 devices • 4-A Peak Source and 4-A Peak Sink Symmetrical Drive • Fast Propagation Delays (17-ns Typical) • Fast Rise and Fall Time

UCC27517A Single-Channel High-Speed Low-Side Gate Driver with Negative Input Voltage Capability (with 4-A Peak Source and Sink)

1 Features 1• Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions • 4-A Peak-Source and Sink Symmetrical Drive • Ability to Handle Negative Voltages (-5 V) at Inputs • Fast Propagation Delays (13-ns typical) • Fast Rise and Fall Times (9-ns and 7-ns t

丝印代码：27512；UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (With 4-A Peak Source and 8-A Peak Sink)

1 Features • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon • Split Output Configuration (Allows Easy and Independent Adj

丝印代码：27512；UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (With 4-A Peak Source and 8-A Peak Sink)

1 Features • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon • Split Output Configuration (Allows Easy and Independent Adj

丝印代码：27512；UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (With 4-A Peak Source and 8-A Peak Sink)

1 Features • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon • Split Output Configuration (Allows Easy and Independent Adj

丝印代码：27512；UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (With 4-A Peak Source and 8-A Peak Sink)

1 Features • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon • Split Output Configuration (Allows Easy and Independent Adj

丝印代码：27512；UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (With 4-A Peak Source and 8-A Peak Sink)

1 Features • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon • Split Output Configuration (Allows Easy and Independent Adj

丝印代码：27512；UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (With 4-A Peak Source and 8-A Peak Sink)

1 Features • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon • Split Output Configuration (Allows Easy and Independent Adj

UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (With 4-A Peak Source and 8-A Peak Sink)

1 Features • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon • Split Output Configuration (Allows Easy and Independent Adj

具有 5V UVLO、采用 SON 封装的增强型产品 4A/8A 单通道栅极驱动器

UCC27512 单通道、高速、低侧栅极驱动器器件能够有效地驱动金属氧化物半导体场效应晶体管 (MOSFET) 和绝缘栅双极型晶体管 (IGBT) 电源开关。 通过使用本身能够大大减少击穿电流的设计，UCC27512 能够拉、灌高、峰值电流脉冲进入到电容负载，此电容负载提供了轨到轨驱动能力以及极小传播延迟（典型值为 13ns）。UCC27512 提供 4A 拉，8A 灌（非对称驱动）峰值驱动电流能力。 非对称驱动中的强劲灌电流能力提升了抗寄生、米勒接通效应的能力。UCC27512 设计用于在 4.5V 至 18V 的宽 VDD 范围和 -55°C 至 125°C 的宽温度范围内运行。 VDD • 低成本、栅极驱动器器件提供 NPN 和 PNP 离散解决方案的高品质替代产品\n• 强劲的灌电流提供增强的抗米勒接通效应性能 \n• 快速上升和下降时间（典型值 9ns 和 7ns）\n• 在 VDD 欠压闭锁 (UVLO) 期间，输出保持低电平（以保证加电和断电时的无毛刺脉冲运行） \n• 用于高抗噪性的滞后逻辑阀值\n• 未使用的输入引脚可被用于启用或者禁用功能\n• 当输入引脚悬空时输出保持在低电平\n• 6 引脚 DRS（带有散热垫的 3mm x 3 mm 超薄小外形尺寸 (WSON) 封装）封装;

Single-Channel High-Speed Low-Side Gate Driver (with 4-A Peak Source and 8-A Peak Sink)

文件：1.61567 Mbytes Page：33 Pages

Single Channel High-Speed, Low-Side Gate Driver

文件：1.60761 Mbytes Page：32 Pages

Single Channel High-Speed, Low-Side Gate Driver

文件：993.2 Kbytes Page：29 Pages

Single-Channel High-Speed Low-Side Gate Driver (with 4-A Peak Source and 4-A Peak Sink)

文件：1.20827 Mbytes Page：31 Pages

Single Channel High-Speed, Low-Side Gate Driver

文件：671.4 Kbytes Page：24 Pages

Single Channel High-Speed, Low-Side Gate Driver

文件：1.19237 Mbytes Page：24 Pages

Single-Channel High-Speed Low-Side Gate Driver (with 4-A Peak Source and 8-A Peak Sink)

文件：1.61567 Mbytes Page：33 Pages

Single Channel High-Speed, Low-Side Gate Driver

文件：1.60761 Mbytes Page：32 Pages

Single-Channel High-Speed Low-Side Gate Driver (with 4-A Peak Source and 8-A Peak Sink)

文件：1.61567 Mbytes Page：33 Pages

Single Channel High-Speed, Low-Side Gate Driver

文件：1.60761 Mbytes Page：32 Pages

封装/外壳：6-WDFN 裸露焊盘 包装：管件 描述：IC GATE DRVR LOW-SIDE 6SON 集成电路（IC） 栅极驱动器

SINGLE CHANNEL HIGH-SPEED, LOW-SIDE GATE DRIVER (WITH 4-A PEAK SOURCE AND 8-A PEAK SINK)

文件：1.39373 Mbytes Page：29 Pages

SINGLE CHANNEL HIGH-SPEED, LOW-SIDE GATE DRIVER (WITH 4-A PEAK SOURCE AND 8-A PEAK SINK)

文件：1.39373 Mbytes Page：29 Pages

SINGLE CHANNEL HIGH-SPEED, LOW-SIDE GATE DRIVER (WITH 4-A PEAK SOURCE AND 8-A PEAK SINK)

文件：1.39373 Mbytes Page：29 Pages

封装/外壳：6-WDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR LOW-SIDE 6SON 集成电路（IC） 栅极驱动器

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

64K(8K x 8) UV ERASABLE PROMs

65,536x8-Bit UV Erasable PROM

GENERAL DESCRIPTION The Am27512 is a 524,288 bit UV-light erasable and electrically programmable read-only memory. It is organized as 65,536 words by 8-bits per word. The standard Am27512 offers a fast 250ns access time allowing operation with high-speed microprocessors without any WAIT state.

NMOS 512K 64K x 8 UV EPROM

DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light

512K (64K X 8 BIT ) UV AND OTP EPROM

文件：302.55 Kbytes Page：7 Pages