1 Features

• Low-Cost Gate-Driver Device Offering Superior

Replacement of NPN and PNP Discrete Solutions

• 4-A Peak Source and 8-A Peak Sink

Asymmetrical Drive

• Strong Sink Current Offers Enhanced Immunity

Against Miller Turnon

• Split Output Configuration (Allows Easy and

Independent Adjustment of Turnon and Turnoff

Speeds) in the UCC27511 Saves 1 Diode

• Fast Propagation Delays (13-ns Typical)

• Fast Rise and Fall Times (9-ns and 7-ns Typical)

• 4.5-V to 18-V Single Supply Range

• Outputs Held Low During VDD UVLO (Ensures

Glitch-Free Operation at Power Up and Power

Down) high•

TTL and CMOS Compatible Input-Logic Threshold

(Independent of Supply Voltage)

• Hysteretic-Logic Thresholds for High-Noise

Immunity

• Dual-Input Design (Choice of an Inverting (IN–

Pin) or Noninverting (IN+ Pin) Driver

Configuration)

– Unused Input Pin can be Used for Enable or

Disable Function

• Output Held Low When Input Pins Are Floating

• Input Pin Absolute Maximum Voltage Levels Not

Restricted by VDD Pin Bias Supply Voltage

• Operating Temperature Range of –40°C to 140°C

• 6-Pin DBV (SOT-23) and 6-Pin DRS (3-mm ×

3-mm WSON With Exposed Thermal Pad)

Package Options

2 Applications

• Switched-Mode Power Supplies

• DC-to-DC Converters

• Companion Gate-Driver Devices for Digital Power

Controllers

• Solar Power, Motor Control, UPS

• Gate Driver for Emerging Wide Band-Gap Power

Devices (such as GaN)

3 Description

The UCC27511 and UCC27512 single-channel, high•

speed, low-side gate-driver device can effectively

drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through

current, UCC27511 and UCC27512 are capable of

sourcing and sinking high peak-current pulses into

capacitive loads offering rail-to-rail drive capability

and extremely small propagation delay, typically 13

ns.