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UCC27200D价格

参考价格:¥11.6424

型号:UCC27200D 品牌:TEXAS 备注:这里有UCC27200D多少钱,2026年最近7天走势,今日出价,今日竞价,UCC27200D批发/采购报价,UCC27200D行情走势销售排行榜,UCC27200D报价。
型号 功能描述 生产厂家 企业 LOGO 操作
UCC27200D

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

UCC27200D

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:922.73 Kbytes Page:28 Pages

TI

德州仪器

UCC27200D

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:927.34 Kbytes Page:31 Pages

TI

德州仪器

UCC27200D

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:1.55131 Mbytes Page:34 Pages

TI

德州仪器

UCC27200D

120V Boot, 3A Peak, High Frequency, High-Side and Low-Side Driver

文件:1.7192 Mbytes Page:37 Pages

TI

德州仪器

UCC27200D

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:卷带(TR) 描述:IC GATE DRVR HALF-BRIDGE 8SOIC 集成电路(IC) 栅极驱动器

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

丝印代码:27200;UCC2720x 120V, 3A/3A Half-Bridge Driver with 8V UVLO

1 Features • Drives two N-channel MOSFETs in high-side and low-side configuration • Negative voltage handling on HS (–5V) • Maximum boot voltage of 120V • Maximum VDD voltage of 20V • On-chip 0.65V VF, 0.65Ω RD bootstrap diode • 22ns propagation delay times • 3A sink and 3A source output c

TI

德州仪器

120V Boot, 3A Peak, High Frequency, High-Side and Low-Side Driver

文件:1.7192 Mbytes Page:37 Pages

TI

德州仪器

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:1.55131 Mbytes Page:34 Pages

TI

德州仪器

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:927.34 Kbytes Page:31 Pages

TI

德州仪器

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:922.73 Kbytes Page:28 Pages

TI

德州仪器

120V Boot, 3A Peak, High Frequency, High-Side and Low-Side Driver

文件:1.7192 Mbytes Page:37 Pages

TI

德州仪器

封装/外壳:8-PowerSOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE DRVR HALF-BRIDGE 8SOPWR 集成电路(IC) 栅极驱动器

TI

德州仪器

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:927.34 Kbytes Page:31 Pages

TI

德州仪器

120V Boot, 3A Peak, High Frequency, High-Side and Low-Side Driver

文件:1.7192 Mbytes Page:37 Pages

TI

德州仪器

120V Boot, 3A Peak, High Frequency, High-Side and Low-Side Driver

文件:1.7192 Mbytes Page:37 Pages

TI

德州仪器

120V Boot, 3A Peak, High Frequency, High-Side and Low-Side Driver

文件:1.7192 Mbytes Page:37 Pages

TI

德州仪器

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:927.34 Kbytes Page:31 Pages

TI

德州仪器

120V Boot, 3A Peak, High Frequency, High-Side and Low-Side Driver

文件:1.7192 Mbytes Page:37 Pages

TI

德州仪器

120V Boot, 3A Peak, High Frequency, High-Side and Low-Side Driver

文件:1.7192 Mbytes Page:37 Pages

TI

德州仪器

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:927.34 Kbytes Page:31 Pages

TI

德州仪器

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:927.34 Kbytes Page:31 Pages

TI

德州仪器

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:922.73 Kbytes Page:28 Pages

TI

德州仪器

120V Boot, 3A Peak, High Frequency, High-Side and Low-Side Driver

文件:1.7192 Mbytes Page:37 Pages

TI

德州仪器

120-V Boot, 3-A Peak, High Frequency, High-Side/Low-Side Driver

文件:1.55131 Mbytes Page:34 Pages

TI

德州仪器

2.0A SUPER-FAST GLASS BODY RECTIFIER

Features • Hermetically Sealed Glass Body Construction • Controlled Avalanche Characteristics • Super-Fast Switching for High Efficiency • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 50A Peak • Low Reverse Leakage Current

DIODES

美台半导体

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

NEC

瑞萨

SINGLE CELL Li-Ion AND Li-Pol BATTERY GAS GAUGE IC FOR PORTABLE APPLICATIONS (bqJUNIOR)

文件:366.58 Kbytes Page:29 Pages

TI

德州仪器

SINGLE CELL Li-Ion AND Li-Pol BATTERY GAS GAUGE IC FOR PORTABLE APPLICATIONS (bqJUNIOR)

文件:366.58 Kbytes Page:29 Pages

TI

德州仪器

UCC27200D产品属性

  • 类型

    描述

  • 型号

    UCC27200D

  • 功能描述

    功率驱动器IC 120V Boot 3-A Peak HF HS/LS Driver

  • RoHS

  • 制造商

    Micrel

  • 产品

    MOSFET Gate Drivers

  • 类型

    Low Cost High or Low Side MOSFET Driver

  • 电源电压-最大

    30 V

  • 电源电压-最小

    2.75 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-8

  • 封装

    Tube

更新时间:2026-5-19 15:27:00
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TI/德州仪器
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25+
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2025+
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原装进口价格优 请找坤融电子!
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23+
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全新原装正品!一手货源价格优势!
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24+
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原装正品价格优势,用芯服务

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