包装：散装 描述：CAP PUSHBUTTON ROUND BLACK 开关 配件 - 帽盖

PowerStore 2K x 8 nvSRAM

Description The U632H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

PowerStore 2K x 8 nvSRAM

Description\nThe U632H16 has two separate modes of o peration: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary st atic RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or rom EEPROM to SRAM. In this mode SRAM functions are disabed.\n ❐ High-performance CMOS nonvolatile static RAM 2048 x 8 bits\n❐ 25, 35 and 45 ns Access Times\n❐ 12, 20 and 25 ns Output Enable Access Times\n❐ ICC = 15 mA at 200 ns Cycle Time\n❐ Automatic STORE to EEPROM on Power Down usi ng external capacitor\n❐ Hardware or Software initiated STORE\n   (STORE Cyc;

PowerStore 2K x 8 nvSRAM

Description The U632H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

PowerStore 2K x 8 nvSRAM

Description The U632H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled.

PowerStore8K x 8 nvSRAM

Description\nThe U632H64 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled. \u0001High-performance CMOS non-volatile static RAM 8192 x 8 bits\n\u000125, 35 and 45 ns Access Times\n\u000112, 20 and 25 ns Output Enable Access Times\n\u0001ICC= 15 mA at 200 ns Cycle Time\n\u0001Automatic STORE to EEPROM on Power Down using external capacitor\n\u0001Hardware or Software initiat;

PowerStore 2K x 8 nvSRAM

PowerStore 2K x 8 nvSRAM

文件：213.42 Kbytes Page：15 Pages

PowerStore 2K x 8 nvSRAM

文件：213.42 Kbytes Page：15 Pages

PowerStore 2K x 8 nvSRAM

文件：213.42 Kbytes Page：15 Pages

PowerStore 2K x 8 nvSRAM

文件：213.42 Kbytes Page：15 Pages

PowerStore 8K x 8 nvSRAM

文件：214.49 Kbytes Page：15 Pages

PowerStore 8K x 8 nvSRAM

文件：408.09 Kbytes Page：15 Pages

PowerStore 8K x 8 nvSRAM

文件：408.09 Kbytes Page：15 Pages

PowerStore 8K x 8 nvSRAM

文件：408.09 Kbytes Page：15 Pages

PowerStore 8K x 8 nvSRAM

文件：408.09 Kbytes Page：15 Pages

PowerStore 8K x 8 nvSRAM

文件：408.09 Kbytes Page：15 Pages

PROGAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY

Programmable Controllers AC / DC−Input Module Solid State Relay The TOSHIBA TLP631 and TLP632 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP632 is no−base internal connection for high−EMI environments.

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages

Military DC-DC Power Supplies

文件：150.47 Kbytes Page：4 Pages