Telephone Speech Circuit

Description The U4030B is an electronic speech circuit for standard and feature telephones. It replaces the hybrid transformer, earphone and microphone interface and the supply voltage generation for external components, e.g. dialer or microcomputers. Using the U4030B in telephone circuit designs

电话语音电路

Telephone Speech Circuit

Description The U4030B is an electronic speech circuit for standard and feature telephones. It replaces the hybrid transformer, earphone and microphone interface and the supply voltage generation for external components, e.g. dialer or microcomputers. Using the U4030B in telephone circuit designs

Telephone Speech Circuit

Description The U4030B is an electronic speech circuit for standard and feature telephones. It replaces the hybrid transformer, earphone and microphone interface and the supply voltage generation for external components, e.g. dialer or microcomputers. Using the U4030B in telephone circuit designs

电话语音电路

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res