P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

Dual N-Channel JFET Switch

FEATURES • Minimum System Error and Calibration • Low Drift With Temperature • Operates From Low Power Supply Voltages • High Output Impedance

LOW NOISE LOW DRIFT MONOLITHIC DUAL N CHANNEL JFET

FEATURES LOW DRIFT |V GS1-2 / T| = 10µV/°C TYP. LOW NOISE en = 6nV/Hz @ 10Hz TYP. LOW PINCHOFF Vp = 2.5V TYP.

Linear Systems replaces discontinued Siliconix U401 with LSU401

The U401/ LSU401 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The LSU401 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation

Minimum System Error and Calibration

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CATV/MATV/Satellite Splitter (Indoor)

Low Noise, Low Drift, Monolithic Dual N-Channel JFET

The U401/ LSU401 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The LSU401 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation

Low Noise, Low Drift, Monolithic Dual N-Channel JFET

The U401/ LSU401 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The LSU401 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation

封装/外壳：TO-71-6 金属罐 包装：散装 描述：LOW NOISE, LOW DRIFT, MONOLITHIC 分立半导体产品 晶体管 - JFET

Totalizers mechanic

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Totalizers mechanic

文件：508.84 Kbytes Page：4 Pages

Totalizers mechanic

文件：508.84 Kbytes Page：4 Pages

Totalizers mechanic

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LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER

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IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

Fast Settling, Wideband High-Gain Monolithic Op Amp

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Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages