Description

The TP65H150G4LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Features

• Gen IV technology

• JEDEC-qualified GaN technology

• Dynamic RDS(on)eff production tested

• Robust design, defined by

— Wide gate safety margin

— Transient over-voltage capability

• Very low QRR

• Reduced crossover loss

• RoHS compliant and Halogen-free packaging

Applications

• Consumer

• Power adapters

• Low power SMPS

• Lighting