DESCRIPTION

The TC1401N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT), which has high linearity and high Power Added Efficiency. The device has no via holes in the source pads. The short gate length characteristic enables the device to be used in a circuit up to 20GHz. All devices are 100 DC tested to assure consistent quality. Backside gold plating is compatible with standard AuSn die-attach.

FEATURES

● 0.5W Typical Power at 12 GHz

● Linear Power Gain: GL = 9 dB Typical at 12 GHz

● High Linearity: IP3 = 37 dBm Typical at 12 GHz

● High Power Added Efficiency (PAE): 40

● No Via holes in the source pads

● Non-Via Hole Source for Self-Bias Application

● Breakdown Voltage: BVDGO ≥ 15 V

● Lg = 0.35 µm, Wg = 1.2 mm

● Tight Vp ranges control

● High RF input power handling capability

● 100 DC Tested