DESCRIPTION

The TC1401 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is with via-hole processes to reduce the thermal resistance and grounding inductance. The short gate length enables the device to be used in a circuit up to 20GHz. All devices are 100 DC tested to assure consistent quality. Backside gold plating is compatible with standard AuSn die-attach.

FEATURES

● 0.5W Typical Power at 12 GHz

● Linear Power Gain: GL = 9 dB Typical at 12 GHz

● High Linearity: IP3 = 37 dBm Typical at 12 GHz

● High Power Added Efficiency (PAE): 40 typical

● Via holes in the source pads

● Breakdown Voltage: BVDGO ≥ 15 V

● Lg = 0.35 µm, Wg = 1.2 mm

● Tight Vp ranges control

● High RF input power handling capability

● 100 DC Tested