1. Applications

• Switching Voltage Regulators

2. Features

(1) Chip design of 2nd generation (Built-in SiC schottky barrier diode)

(2) Low diode forward voltage: VDSF = -1.35 V (typ.)

(3) High voltage: VDSS = 1200 V

(4) Low drain-source on-resistance: RDS(ON) = 70 mΩ (typ.)

(5) Less susceptible to malfunction due to high threshold voltage: Vth = 4.2 to 5.8 V (VDS = 10 V, ID = 20 mA)

(6) Enhancement mode.