○ Switching Regulator Applications

○ Load Switch Applications

• Lead(Pb)-Free

• Multi-chip discrete device; built-in P channel MOS FET for main

switch and N Channel MOS FET for drive

• Small footprint due to small and thin package

• Low drain-source ON resistance

: P Channel RDS (ON) = 31 mΩ (typ.)

• Low drain-source ON resistance

High forward transfer admittance

: P Channel |Yfs| = 13 S (typ.)

• Low leakage current

: P Channel IDSS = −10 μA (VDS = −12 V)

• Enhancement−mode

: P Channel Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA)