位置:TLP747J > TLP747J详情

TLP747J中文资料

厂家型号

TLP747J

文件大小

102.47Kbytes

页面数量

2

功能描述

TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor

TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TOSHIBA

TLP747J数据手册规格书PDF详情

Office Machine Switching Power Supply

The TOSHIBA TLP747JF consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. All parameters are tested to the specification of TLP747J. (both condition and limits)

• Peak off−state voltage: 600V (min.)

• Trigger LED current: 15mA (max.)

• On−state current: 150mA (max.)

• UL recognized: UL1577, file No. E67349

• BSI approved: BS EN60065: 2002,

certificate No. 7364

BS EN60950-1: 2002,

certificate No. 7365

• SEMCO approved:EN60065,EN60950-1,EN60335-1 Certificate no.302586

• Isolation voltage: 4000Vrms (min.)

• Option (D4) type

• VDE approved: DIN EN 60747-5-2, certificate no. 40009373

Maximum operating insulation voltage: 890, 1130VPK

Highest permissible over voltage: 6000, 8000VPK

• Creepage distance: 8.0mm (min.)

Clearance: 8.0mm (min.)

Internal creepage path: 4.0mm (min.)

Insulation thickness: 0.5mm (min.)

• Conforming safety standards:

DIN 57 804. VDE0804 / 1.83

DIN IEC65 / VDE0860 / 8.81

DIN IEC380 / VDE0806 / 8.81

DIN IEC435 / VDE0805 / draft Nov.84

DIN IEC601T1 / VDE0750T1 / 5.82

BS7002: 1989 (EN60950)

TLP747J产品属性

  • 类型

    描述

  • 型号

    TLP747J

  • 制造商

    TOSHIBA

  • 制造商全称

    Toshiba Semiconductor

  • 功能描述

    TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor

更新时间:2025-11-26 16:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
24+
DIP-6
2500
自己现货
TOSHIBA
04+
DIP-6
2000
TOSHIBA/东芝
23+
DIP6
50000
全新原装正品现货,支持订货
TOSHIBA/东芝
25+
DIP6
15100
就找我吧!--邀您体验愉快问购元件!
TOSHIBA/东芝
2011+
DIPSOP6
20000
原装现货
TOSHIBA/东芝
23+
DIP6
50000
全新原装正品现货,支持订货
TOSHIBA/东芝
/ROHS.original
原封
22102
电子元件,供应 -正纳电子/ 元器件IC -MOS -MCU.
TOSHIBA/东芝
24+
NA/
3658
原装现货,当天可交货,原型号开票
TOSHIBA/东芝
23+
DIP-6
98900
原厂原装正品现货!!
TOSHIBA/东芝
23+
DIP6
66600
专业芯片配单原装正品假一罚十