Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter

The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector.

This unit is 8-lead DIP package. TLP351 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs.

• Peak output current: ±0.6 A (max)

• Guaranteed performance over temperature: −40 to 100°C

• Supply current: 2 mA (max)

• Power supply voltage: 10 to 30 V

• Threshold input current : IF= 5 mA (max)

• Switching time (tpLH/tpHL) : 700 ns (max)

• Common mode transient immunity: 10 kV/μs

• Isolation voltage: 3750 Vrms

• Option(D4)

VDE Approved : DIN EN60747-5-2

Maximum Operating Insulation Voltage : 890VPK

Highest Permissible Over Voltage : 4000VPK