Industrial Inverter

MOS FET / IGBT Gate Driver

IH(Induction Heating)

Operate at high ambient temperatures up to 110°C

The Toshiba TLP151 consists of an infrared LED and integrated high gain,

high-speed photodetectors. The TLP151 is housed in the SO6 package.

The photodetector has an internal Faraday shield that provides a guaranteed

common-mode transient immunity of ±15 kV/μs. TLP151 is suitable for direct

gate driving circuit for IGBTs or power MOSFETs.

 Buffer logic type (Totem pole output)

 Package type: SO6

 Peak Output Current : IOP = ±0.6 A (max)

 Guaranteed performance over temperature: -40 to 110°C

 Power supply voltage: 10 to 30 V

 Threshold Input Current: IFLH = 5.0 mA (max)

 Propagation delay time : tpLH / tpHL = 700 ns (max)

 Common mode transient immunity : ±15 kV/μs （min）

 Isolation voltage : 3750 Vrms (min)

 UL-recognized : UL 1577, File No.E67349

 cUL-recognized : CSA Component Acceptance Service No.5A

File No.E67349

 VDE-approved ：EN 60747-5-5 ,EN 62368-1 (Note 1)