Applications

• High-Speed Switching

Features

(1) 1.5-V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA)

RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA)

RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA)

RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V, ID = 50 mA)

(3) Low leakage current

(4) N-ch 2-in-1