Applications

• High-Speed Switching

Features

(1) 1.5-V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V)

RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V)

RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V)

RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V)

(3) Low leakage current