Field Effect Transistor

Silicon N Channel MOS Type (π-MOS IV)

High Speed, High Current Switching Applications

Features

● Low Drain-Source ON Resistance

- RDS(ON) = 0.24Ω (Typ.)

● High Forward Transfer Amittnace

-|Yfs| = 15S (Typ.)

● Low Leakage Current

- IDSS = -100μA (Max.)(VDS = 500V)

● Enhancement-Mode

- Vth = 2.0 ~ 4.0V (VDS = -10V, ID = 1mA)