■ General Description

The XP132A11A1SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package makes high density mounting possible.

◆ P-Channel Power MOS FET

◆ DMOS Structure

◆ Low On-State Resistance : 0.11Ω (max)

◆ Ultra High-Speed Switching

◆ SOP - 8 Package

■ Features

Low on-state resistance : Rds (on) = 0.065Ω ( Vgs = -10V )

Rds (on) = 0.11Ω ( Vgs = -4.5V )

Ultra high-speed switching

Operational Voltage : -4.5V

High density mounting : SOP - 8

■ Applications

● Notebook PCs

● Cellular and portable phones

● On - board power supplies

● Li - ion battery systems