■ General Description

The XP162A01B5PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

The small SOT-89 package makes high density mounting possible.

◆ P-Channel Power MOS FET

◆ DMOS Structure

◆ Low On-State Resistance: 0.25Ω (max)

◆ Ultra High-Speed Switching

◆ SOT-89 Package

■ Features

Low on-state resistance: Rds(on)=0.25Ω(Vgs=-4.5V)

: Rds(on)=0.4Ω(Vgs=-2.5V)

Ultra high-speed switching

Operational Voltage : -2.5V

High density mounting : SOT-89

■ Applications

● Notebook PCs

● Cellular and portable phones

● On-board power supplies

● Li-ion battery systems