1 Features

• Specified for defense and aerospace applications

• Controlled baseline

• One assembly and test site

• One fabrication site

• Product traceability

• Extended product life cycle

• Local and remote diode temperature sensor

– ±2.5°C error, maximum

– 0.0625°C resolution

• Internal EEPROM for autonomous operation

– Storage for four independent transfer functions

– Device configuration storage

– Open space for user storage

– Qualified for 15-year retention

• Four analog outputs

– Four monotonic DACs: 1.22mV resolution

– Automatically configured output ranges:

• Positive output voltage: 5.5V, maximum

• Negative output voltage: –10V, minimum

– High current drive capability:

• Source up to 100mA

• Sink up to 20mA

– High capacitive load tolerant: up to 15μF

• Gate bias on and off control switches

– Two programmable off voltages

• Two auxiliary DACs: 1.22mV resolution

– Fast switching time: 50ns, typical

– Low resistance: 3Ω, maximum

• Built-in sequencing control

• Internal 2.5V reference

• SPI and I2C interfaces: 1.7V to 3.6V operation

– SPI: 4-wire Interface

– I2C: Eight selectable peripheral addresses

• Specified temperature range: –55°C to +125°C

2 Applications

• Radar

• Electronic warfare

• Communications payload

• Defense radio

3 Description

The AFE10004-EP is a highly integrated,

autonomous, power-amplifier (PA) precision analog

front end (AFE) that includes four temperature

compensation digital-to-analog converters (DACs),

integrated EEPROM, and gate bias switches. The four

DACs are programmed by four independent, userdefined,

temperature-to-voltage transfer functions

stored in the internal EEPROM. This design allows

correction any temperature effects to be corrected

without additional external circuitry. After start-up, the

device operates without intervention from a system

controller to provide a complete system for setting and

compensating bias voltages in control applications.

The AFE10004-EP has four gate bias outputs that

are switched on and off through dedicated control

pins. The gate bias switches are designed for fast

response. In combination with the device PA_ON pin,

this fast response enables correct power sequencing

and protection of depletion-mode transistors, such as

GaAs and GaN.

The function integration and wide operating

temperature range make the AFE10004-EP an

excellent choice as an all-in-one, autonomous bias

control circuit for the power amplifiers found in RF

systems. The flexible DAC output ranges and builtin

sequencing features let the device be used as

a biasing controller for a large variety of transistor

technologies, such as LDMOS, GaAs, and GaN.