1 Features

1• Low-Cost, Gate-Driver Device Offering Superior

Replacement of NPN and PNP Discrete Solutions

• Pin-to-Pin Compatible With TI's TPS2828 and

TPS2829 devices

• 4-A Peak Source and 4-A Peak Sink Symmetrical

Drive

• Fast Propagation Delays (17-ns Typical)

• Fast Rise and Fall Times (8-ns and 7-ns Typical)

• 4.5-V to 18-V Single Supply Range

• Outputs Held Low During VDD UVLO (Ensures

Glitch-Free Operation at Power Up and Power

Down)

• CMOS Input Logic Threshold (Function of Supply

Voltage With Hysteresis)

• Hysteretic Logic Thresholds for High Noise

Immunity

• EN Pin for Enable Function (Allowed to Be No

Connect)

• Output Held Low when Input Pins are Floating

• Input Pin Absolute Maximum Voltage Levels Not

Restricted by VDD Pin Bias Supply Voltage

• Operating Temperature Range of –40°C to 140°C

• 5-Pin DBV Package (SOT-23)

2 Applications

• Switched-Mode Power Supplies

• DC-DC Converters

• Companion Gate Driver Devices for Digital Power

Controllers

• Solar Power, Motor Control, UPS

• Gate Driver for Emerging Wide Band-Gap Power

Devices (Such as GaN)

3 Description

The UCC27518 and UCC27519 single-channel, high-

speed, low-side gate driver device can effectively

drive MOSFET and IGBT power switches. Using a

design that inherently minimizes shoot-through

current, UCC27518 and UCC27519 can source and

sink high, peak-current pulses into capacitive loads

offering rail-to-rail drive capability and extremely small

propagation delay typically 17 ns.

The UCC27518 and UCC27519 provide 4-A source,

4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC27518 and UCC27519 are designed to

operate over a wide VDD range of 4.5 V to 18 V and a wide temperature range of –40°C to 140°C. Internal

under voltage lockout (UVLO) circuitry on the VDD

pin holds output low outside VDD operating range.

The capability to operate at low voltage levels such

as below 5 V, along with best-in-class switching

characteristics, is especially suited for driving

emerging wide band-gap power switching devices such as GaN power semiconductor devices.