1 Features

1• Low-Cost Gate-Driver Device Offering Superior

Replacement of NPN and PNP Discrete Solutions

• 4-A Peak-Source and Sink Symmetrical Drive

• Ability to Handle Negative Voltages (-5 V) at

Inputs

• Fast Propagation Delays (13-ns typical)

• Fast Rise and Fall Times (9-ns and 7-ns typical)

• 4.5 to 18-V Single-Supply Range

• Outputs Held Low During VDD UVLO (ensures

glitch-free operation at power up and power down)

• TTL and CMOS Compatible Input-Logic Threshold

(independent of supply voltage)

• Hysteretic-Logic Thresholds for High-Noise

Immunity

• Dual Input Design (choice of an inverting (IN- pin)

or non-inverting (IN+ pin) driver configuration)

– Unused Input Pin can be Used for Enable or

Disable Function

• Output Held Low when Input Pins are Floating

• Input Pin Absolute Maximum Voltage Levels Not

Restricted by VDD Pin Bias Supply Voltage

• Operating Temperature Range of –40°C to

+140°C

• 5-Pin DBV (SOT-23) Package Option

2 Applications

• Switch-Mode Power Supplies

• DC-to-DC Converters

• Companion Gate-Driver Devices for Digital-Power

Controllers

• Solar Power, Motor Control, UPS

• Gate Driver for Emerging Wide Band-Gap Power

Devices (such as GaN)

3 Description

The UCC27517A single-channel, high-speed, low-

side gate driver device is capable of effectively

driving MOSFET and IGBT power switches. Using a

design that inherently minimizes shoot-through

current, the UCC27517A is capable of sourcing and

sinking high peak-current pulses into capacitive loads

offering rail-to-rail drive capability and extremely small

propagation delay typically 13 ns.

The UCC27517A device is capable of handling –5 V

at input.

The UCC27517A provides 4-A source and 4-A sink

(symmetrical drive) peak-drive current capability at

VDD = 12 V.

The UCC27517A is designed to operate over a wide

VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage

Lockout (UVLO) circuitry on VDD pin holds output low

outside VDD operating range. The capability to

operate at low voltage levels such as below 5 V,

along with best-in-class switching characteristics, is

especially suited for driving emerging wide band-gap power-switching devices such as GaN power

semiconductor devices.