1 Features

• AEC-Q100 qualified for automotive applications:

device temperature grade 1

• –40°C to +150°C junction temperature range

• 5V turn-off Under Voltage Lockout (UVLO)

• Drives two N-channel MOSFETs in high-side and

low-side configuration with independent inputs

• Maximum boot voltage 120V DC

• 3.7A source, 4.5A sink output currents

• Input pins can tolerate –10V to +20V and are

independent of supply voltage range

• TTL compatible Inputs

• 7V to 17V VDD operating range, (20V ABS

maximum)

• 7.2ns rise and 5.5ns fall time with 1000pF load

• Fast propagation delay times (20ns typical)

• 4ns typical delay matching

• Available in the SOIC8 (PowerPAD) package

2 Applications

• Automotive DC/DC converters and OBC

• 2-wheeler and 3-wheeler traction drive and battery

pack

• Electric power steering (EPS)

• Wireless charging

• Smart glass module

3 Description

The UCC27212A-Q1 device driver is based on the

popular UCC27211 MOSFET drivers. In addition,

UCC27212A-Q1 offers extended operating range all

the way down to 5V which helps lower power losses.

The peak output pullup and pulldown current is 3.7A

source and 4.5A sink. This allows for the ability to

drive large power MOSFETs with minimized switching

losses during the e Miller Plateau of the MOSFET.

The input structure can directly handle –10V, which

increases robustness and also allows direct interface

to gate-drive transformers without using rectification

diodes. The inputs are also independent of supply

voltage and have a 20V maximum rating.

The switching node of the UCC27212A-Q1 (HS pin)

can handle –(24V – VDD) maximum, which allows

the high-side channel to be protected from inherent

negative voltages caused by parasitic inductance

and stray capacitance. The UCC27212A-Q1 has

increased hysteresis that allows for interface to

analog or digital PWM controllers with enhanced

noise immunity. The low-side and high-side gate

drivers are independently controlled and matched to

ns between the turn on and turn off of each other.

An on-chip 120V rated bootstrap diode eliminates

the external discrete diodes. Undervoltage lockout

is provided for both the high-side and the low-side

drivers which provides symmetric turn on and turn off

behavior and forces the outputs low drive voltage is

below the specified threshold.