位置:TXS0102V-Q1 > TXS0102V-Q1详情

TXS0102V-Q1中文资料

厂家型号

TXS0102V-Q1

文件大小

941.45Kbytes

页面数量

27

功能描述

TXS0102V-Q1 Automotive 2-Bit Bi-Directional, Level-Shifting, Voltage Translator for Open-Drain and Push-Pull Applications

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI2

TXS0102V-Q1数据手册规格书PDF详情

1 Features

• Qualified for automotive applications

• AEC-Q100 qualified with the following results:

– Device temperature grade 1: -40°C to + 125°C

ambient operating temperature range

– Device HBM ESD classification level 2

– Device CDM ESD classification level C5

– ESD protection per JESD 22:

• A port:

– 2000V Human-Body Model (A114-B)

– 500V Charged-Device Model (C101)

• B port:

– 5000V Human-Body Model (A114-B)

– 500V Charged-Device Model (C101)

• No direction-control signal needed

• Maximum data rates:

– 24 Mbps (push pull)

– 2 Mbps (open drain)

• Available in the Texas Instruments NanoStar™

integrated circuit package

• 1.65V to 3.6V on A port and 2.3V to 5.5V on B port

(VCCA ≤ VCCB)

• VCC isolation feature: if either VCC input is at GND,

both ports are in the High-Impedance state

• No power-supply sequencing required: either VCCA

or VCCB can be ramped first

• Ioff supports partial-power-down mode operation

• Latch-up performance exceeds 100mA per JESD

78, Class II

2 Applications

• I2C / SMBus

• UART

• GPIO

3 Description

This two-bit non-inverting translator is a bidirectional

voltage-level translator and can be used to establish

digital switching compatibility between mixed-voltage

systems. It uses two separate configurable powersupply

rails, with the A ports supporting operating

voltages from 1.65V to 3.6V while it tracks the VCCA

supply, and the B ports supporting operating voltages

from 2.3V to 5.5V while it tracks the VCCB supply.

This allows the support of both lower and higher logic

signal levels while providing bidirectional translation

capabilities between any of the 1.8V, 2.5V, 3.3V, and

5V voltage nodes.

When the output-enable (OE) input is low, all I/Os

are placed in the high-impedance state, which

significantly reduces the power-supply quiescent

current consumption.

To put the device in the high-impedance state during

power up or power down, OE should be tied to

GND through a pulldown resistor; the current-sourcing

capability of the driver determines the minimum value

of the resistor.

更新时间:2025-11-26 16:47:00
供应商 型号 品牌 批号 封装 库存 备注 价格
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6523
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