1 Features

• Radiation performance:

– Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)

– Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg

– Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg

• 14V maximum input voltage for both controller and driver stages

• Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices

– 1.2A peak source and sink capability at 12V

– Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)

– Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)

• 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation

• Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)

• External clock synchronization capability

• Adjustable slope compensation and soft start

• Plastic packages outgas tested per ASTM E595

• Available in military temperature range (–55°C to 125°C)