1 Features

• Radiation performance:

– Radiation hardness assurance (RHA) up to

total ionizing dose (TID) of 100krad(Si)

– Single-event latchup (SEL), single-event

burnout (SEB) and single-event gate rupture

(SEGR) immune to

LET = 75MeV-cm2/mg

– Single-event transient (SET) and single-event

functional interrupt (SEFI) characterized up to

LET = 75MeV-cm2/mg

• 4.5V to 14V input voltage range for both controller

and driver stages

• Dedicated gate driver voltage input pin (PVIN)

allows for driving both silicon and GaN devices

– 1.2A peak source and sink capability at 12V

– Optional connection of VLDO linear regulator

output to PVIN for driving GaN

– Programmable linear regulator (VLDO) from

4.5V to 5.5V

• 0.6V ±1% voltage reference over temperature,

radiation, and line and load regulation

• Switching frequency from 100kHz to 1MHz

• External clock synchronization capability

• Adjustable slope compensation and soft start

• Plastic packages outgas tested per ASTM E595

2 Applications

• Space satellite power supplies

• Communications payload

• Radar imaging payload

• Satellite electrical power system

3 Description

The TPS7H502x is a radiation-hardened, current

mode, single-ended PWM controller with an

integrated gate driver that can be utilized in both

silicon and gallium nitride (GaN) power semiconductor

based converter designs. The TPS7H502x integrates

several key functions, such as soft-start, enable, and

adjustable slope compensation while maintaining a

small package size. The controller also features a

0.6V ±1% voltage reference tolerance to support

highly accurate power converter designs.

The TPS7H502x can be operated using an external

clock through the SYNC pin or by programming the

internal oscillator using the RT pin at a frequency

determined by the user. The device is capable of

switching at frequencies up to 1MHz. The driver

stage for the controller has a wide input voltage

range from 4.5V to 14V and supports peak source

and sink currents up to 1.2A. The programmable

regulator, VLDO, can also be connected directly to

the input of the driver stage (PVIN) to supply wellcontrolled

gate voltage for operation with GaN FETs.

The programmable regulator has a voltage range from

4.5V to 5.5V. The TPS7H5020 device has a maximum

duty cycle of 100% while the TPS7H5021 has a

50% maximum duty cycle. The controller supports

numerous power converter topologies, including

flyback, forward, and boost.