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TPS43060RTER.B中文资料

厂家型号

TPS43060RTER.B

文件大小

1849.8Kbytes

页面数量

44

功能描述

TPS4306x Low Quiescent Current Synchronous Boost DC-DC Controller With Wide VIN Range

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI2

TPS43060RTER.B数据手册规格书PDF详情

1 Features

1• 58-V Maximum Output Voltage

• 4.5 to 38 V (40 V Absolute Max) VIN Range

• TPS43060: 7.5-V Gate Drive Optimized for

Standard Threshold MOSFETs

• TPS43061: 5.5-V Gate Drive Optimized for Low

Qg NexFET™ Power MOSFETs

• Current-Mode Control With Internal Slope

Compensation

• Adjustable Frequency from 50 kHz to 1 MHz

• Synchronization Capability to External Clock

• Adjustable Soft-Start Time

• Inductor DCR or Resistor Current Sensing

• Output Voltage Power-Good Indicator

• ±0.8% Feedback Reference Voltage

• 5-μA Shutdown Supply Current

• 600-μA Operating Quiescent Current

• Integrated Bootstrap Diode (TPS43061)

• Cycle-by-Cycle Current Limit and Thermal

Shutdown

• Adjustable Undervoltage Lockout (UVLO) and

Output Overvoltage Protection

• Small 16-Pin WQFN (3 mm × 3 mm) Package

With PowerPAD™

• –40°C to 150°C Operating TJ Range

2 Applications

• Thunderbolt Port for PCs

• Automotive Power Systems

• Synchronous Flyback

• GaN RF Power Amplifiers

• Tablet Computer Accessories

• Battery-Powered Systems

• 5-V, 12-V, and 24-V DC Bus Power Systems

3 Description

The TPS43060 and TPS43061 are low IQ currentmode

synchronous boost controllers with wide-input

voltage range from 4.5 to 38 V (40 V absolute max)

and boosted output range up to 58 V. Synchronous

rectification enables high-efficiency for high-current

applications, and lossless inductor DCR sensing

further improves efficiency. The resulting low-power

losses combined with a 3-mm × 3-mm WQFN-16

package with PowerPAD™ supports high powerdensity

and high-reliability boost converter solutions

over extended (–40°C to 150°C) temperature range.

The TPS43060 includes a 7.5-V gate drive supply,

which is suitable to drive a broad range of MOSFETs.

The TPS43061 has a 5.5-V gate drive supply and

driver strength optimized for low Qg NexFET power

MOSFETs. Also, TPS43061 provides an integrated

bootstrap diode for the high-side gate driver to reduce

the external parts count.

更新时间:2026-3-7 13:01:00
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