1 Features

• Drives Two N-Channel MOSFETs with 14ns

Adaptive Dead Time

• Wide Gate Drive Voltage: 4.5V Up to 8.8V With

Best Efficiency at 7V to 8V

• Wide Power System Train Input Voltage: 3V Up to

27V

• Wide Input PWM Signals: 2.0V up to 13.2V

Amplitude

• Capable to Drive MOSFETs with ≥40A Current per

Phase

• High Frequency Operation: 14ns Propagation

Delay and 10ns Rise/Fall Time Allow FSW – 2MHz

• Capable to Propagate <30ns Input PWM Pulses

• Low-Side Driver Sink On-Resistance (0.4Ω)

Prevents dV/dT Related Shoot-Through Current

• 3-State PWM Input for Power Stage Shutdown

• Space Saving Enable (Input) and Power Good

(Output) Signals on Same Pin

• Thermal Shutdown

• UVLO Protection

• Internal Bootstrap Diode

• Economical SOIC-8 and Thermally Enhanced

3mm x 3mm VSON-8 Packages

• High Performance Replacement for Popular 3-

State Input Drivers

2 Applications

• Multi-Phase DC-to-DC Converters with Analog or

Digital Control

• Desktop and Server VRMs and EVRDs

• Portable and Notebook Regulators

• Synchronous Rectification for Isolated Power

Supplies

3 Description

The TPS28225 is a high-speed driver for N-channel

complimentary driven power MOSFETs with adaptive

dead-time control. This driver is optimized for use in

variety of high-current one and multi-phase DC-to-DC

converters. The TPS28225 is a solution that provides

high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8V gate

drive voltage, 14ns adaptive dead-time control, 14ns

propagation delays and high-current 2A source and

4A sink drive capability. The 0.4Ω impedance for the

lower gate driver holds the gate of power MOSFET

below its threshold and ensures no shoot-through

current at high dV/dt phase node transitions. The

bootstrap capacitor charged by an internal diode

allows use of N-channel MOSFETs in a half-bridge

configuration.