1 Features

• Input Voltage: 1.1 V to 3.6 V

• Ultralow ON-Resistance

– rON = 55 mΩ at VIN = 3.6 V

– rON = 65 mΩ at VIN = 2.5 V

– rON = 75 mΩ at VIN = 1.8 V

– rON = 115 mΩ at VIN = 1.2 V

• 500-mA Maximum Continuous Switch Current

• Quiescent Current < 1 μA

• Shutdown Current < 1 μA

• Low Control Threshold Allows Use of 1.2-V, 1.8-V,

2.5-V, and 3.3-V Logic

• Configurable Enable Logic

• Controlled Slew Rate to Avoid Inrush Currents:

165 μs at 1.8 V

• Six-Terminal Wafer Chip Scale Package (DSBGA)

• ESD Performance Tested Per JESD 22

– 2000-V Human-Body Model

(A114-B, Class II)

– 1000-V Charged-Device Model (C101)

2 Applications

• PDAs

• Cell Phones

• GPS Devices

• MP3 Players

• Digital Cameras

• Peripheral Ports

• Portable Instrumentation

3 Description

The TPS22932B device is a low rON load switch with

controlled turnon. The device contains a P-channel MOSFET that can operate over an input voltage

range of 1.1 V to 3.6 V.

The switch is controlled by eight patterns of 3-bit

input. The user can choose the logic functions MUX,

AND, OR, NAND, NOR, inverter, and noninverter. All

inputs can be connected to VIN or GND. The control pins can be connected to low-voltage GPIOs allowing

the switch to be controlled by either 1.2-V, 1.8-V, 2.5-

V, or 3.3-V logic signals while keeping extremely low

quiescent current.

A 120-Ω on-chip load resistor is available for output

quick discharge when the switch is turned off. The

rise time (slew rate) of the device is internally controlled to avoid inrush current: the rise time of

TPS22932B is 165 μs.

TPS22932B is available in a space-saving 6-pin

DSBGA (YFP with 0.4-mm pitch). The device is

characterized for operation over the free-air

temperature range of –40°C to 85°C.