1 Features

1• Qualified for Automotive Applications

• AEC-Q100 Qualified With the Following Results:

– Device Temperature Grade 1: –40°C to

+125°C Ambient Operating Temperature

Range

– Device HBM ESD Classification Level 2

– Device CDM ESD Classification Level C4B

• 600-mA Rated Drain Current (Per Channel)

• CMOS Pin-to-Pin Improvement of 7-channel

Darlington Array (For Example: ULN2003A)

• Power Efficient (Very low VOL)

– Less Than 4 Times Lower VOL at 100 mA Than

Darlington Array

• Very Low Output Leakage < 10 nA Per Channel

• High-Voltage Outputs 30 V

• Compatible with 1.8-V to 5-V Microcontroller and

Logic Interface

• Internal Free-wheeling Diodes for Inductive Kickback

Protection

• Input Pull-down Resistors Allows Tri-stating the

Input Driver

• Input RC-Snubber to Eliminate Spurious

Operation in Noisy Environment

• ESD Protection Exceeds JESD 22

– 2-kV HBM, 500-V CDM

2 Applications

• Inductive Loads

– Relays

– Unipolar Stepper and Brushed DC Motors

– Solenoids and Valves

• LEDs

• Logic Level Shifting

• Gate and IGBT Drive

3 Description

The TPL7407LA-Q1 is a high-voltage, high-current

NMOS transistor array. This device consists of seven

NMOS transistors that feature high-voltage outputs

with common-cathode clamp diodes for switching

inductive loads. The maximum drain-current rating of

a single NMOS channel is 600 mA. New regulation

and drive circuitry added to give maximum drive

strength across all GPIO ranges (1.8 V–5 V).The

transistors can be paralleled for higher current

capability.

The TPL7407LA-Q1 key benefit is its improved power

efficiency and lower leakage than a Bipolar Darlington

Implementation. With the lower VOL the user is

dissipating less than half the power than traditional

relay drivers with currents less than 250 mA per

channel.