Wide Range of Supply Voltages Over

Specified Temperature Range:

TA = –40°C to 85°C . . . 2 V to 8 V

Fully Characterized at 3 V and 5 V

Single-Supply Operation

Common-Mode Input-Voltage Range

Extends Below the Negative Rail and up to

VDD –1 V at 25°C

Output Voltage Range Includes Negative

Rail

High Input Impedance . . . 1012 W Typ

Low Noise . . . 25 nV//Hz Typically at

f = 1 kHz (High-Bias Mode)

ESD-Protection Circuitry

Designed-In Latch-Up Immunity

Bias-Select Feature Enables Maximum

Supply Current Range From 17 mA to

1.5 mA at 25°C

description

The TLV2341 operational amplifier has been specifically developed for low-voltage, single-supply applications

and is fully specified to operate over a voltage range of 2 V to 8 V. The device uses the Texas Instruments

silicon-gate LinCMOSE technology to facilitate low-power, low-voltage operation and excellent offset-voltage

stability. LinCMOSE technology also enables extremely high input impedance and low bias currents allowing

direct interface to high-impedance sources.

The TLV2341 offers a bias-select feature, which allows the device to be programmed with a wide range of

different supply currents and therefore different levels of ac performance. The supply current can be set at

17 mA, 250 mA, or 1.5 mA, which results in slew-rate specifications between 0.02 and 2.1 V/ms (at 3 V).

The TLV2341 operational amplifiers are especially well suited to single-supply applications and are fully

specified and characterized at 3-V and 5-V power supplies. This low-voltage single-supply operation combined

with low power consumption makes this device a good choice for remote, inaccessible, or portable

battery-powered applications. The common-mode input range includes the negative rail.

The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The

TLV2341 incorporates internal ESD-protection circuits that prevents functional failures at voltages up to

2000 V as tested under MIL-STD 883 C, Methods 3015.2; however, care should be exercised in handling these

devices as exposure to ESD may result in the degradation of the device parametric performance.