Members of the Texas Instruments

WidebusE Family

State-of-the-Art Advanced BiCMOS

Technology (ABT) Design for 3.3-V

Operation and Low Static-Power

Dissipation

Support Mixed-Mode Signal Operation (5-V

Input and Output Voltages With 3.3-V VCC)

Support Unregulated Battery Operation

Down to 2.7 V

Ioff and Power-Up 3-State Support Hot

Insertion

Bus Hold on Data Inputs Eliminates the

Need for External Pullup/Pulldown

Resistors

Typical VOLP (Output Ground Bounce)

< 0.8 V at VCC = 3.3 V, TA = 25°C

Distributed VCC and GND Pin Configuration

Minimizes High-Speed Switching Noise

Flow-Through Architecture Optimizes PCB

Layout

Latch-Up Performance Exceeds 500 mA Per

JESD 17

ESD Protection Exceeds 2000 V Per

MIL-STD-883, Method 3015; Exceeds 200 V

Using Machine Model (C = 200 pF, R = 0)

Package Options Include Plastic Shrink

Small-Outline (DL) and Thin Shrink

Small-Outline (DGG) Packages and 380-mil

Fine-Pitch Ceramic Flat (WD) Package

Using 25-mil Center-to-Center Spacings

description

The ’LVTH16543 devices are 16-bit registered transceivers designed for low-voltage (3.3-V) VCC operation, but

with the capability to provide a TTL interface to a 5-V system environment. These devices can be used as two

8-bit transceivers or one 16-bit transceiver. Separate latch-enable (LEAB or LEBA) and output-enable (OEAB

or OEBA) inputs are provided for each register to permit independent control in either direction of data flow.

The A-to-B enable (CEAB) input must be low to enter data from A or to output data from B. If CEAB is low and

LEAB is low, the A-to-B latches are transparent; a subsequent low-to-high transition of LEAB puts the A latches

in the storage mode. With CEAB and OEAB both low, the 3-state B outputs are active and reflect the data present

at the output of the A latches. Data flow from B to A is similar but requires using the CEBA, LEBA, and OEBA

inputs.

Active bus-hold circuitry is provided to hold unused or floating data inputs at a valid logic level.

When VCC is between 0 and 1.5 V, the devices are in the high-impedance state during power up or power down.

However, to ensure the high-impedance state above 1.5 V, OE should be tied to VCC through a pullup resistor;

the minimum value of the resistor is determined by the current-sinking capability of the driver.

These devices are fully specified for hot-insertion applications using Ioff and power-up 3-state. The Ioff circuitry

disables the outputs, preventing damaging current backflow through the devices when they are powered down.

The power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down,

which prevents driver conflict.

The SN54LVTH16543 is characterized for operation over the full military temperature range of –55°C to 125°C.

The SN74LVTH16543 is characterized for operation from –40°C to 85°C.