位置:SN74LVC2G38DCUR.B > SN74LVC2G38DCUR.B详情

SN74LVC2G38DCUR.B中文资料

厂家型号

SN74LVC2G38DCUR.B

文件大小

525.31Kbytes

页面数量

18

功能描述

Dual 2-Input NAND Gate With Open-Drain Outputs

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TI2

SN74LVC2G38DCUR.B数据手册规格书PDF详情

1FEATURES

2• Available in the Texas Instruments NanoFree™

Package

• Supports 5-V VCC Operation

• Inputs Accept Voltages to 5.5 V

• Max tpd of 4 ns at 3.3 V

• Low Power Consumption, 10-μA Max I CC

• ±24-mA Output Drive at 3.3 V

• Typical VOLP (Output Ground Bounce) <0.8 V at

VCC = 3.3 V, TA = 25°C

• Typical VOHV (Output VOH Undershoot)

>2 V at VCC = 3.3 V, TA = 25°C

• Ioff Supports Live insertion, Partial-Power-

Down Mode Operation and Back Drive

Protection

• Latch-Up Performance Exceeds 100 mA Per

JESD 78, Class II

• ESD Protection Exceeds JESD 22

– 2000-V Human-Body Model (A114-A)

– 200-V Machine Model (A115-A)

– 1000-V Charged-Device Model (C101)

DESCRIPTION

The SN74LVC2G38 is designed for 1.65-V to 5.5-V

VCC operation.

This device is a dual two-input NAND buffer gate with

open-drain outputs. It performs the Boolean function Y = A • B or Y = A + B in positive logic.

NanoFree™ package technology is a major

breakthrough in IC packaging concepts, using the die

as the package.

This device is fully specified for partial-power-down

applications using Ioff. The Ioff circuitry disables the

outputs, preventing damaging current backflow

through the device when it is powered down.

更新时间:2025-10-20 14:31:00
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