位置:SN74LVC1G86DBVR.A > SN74LVC1G86DBVR.A详情
SN74LVC1G86DBVR.A中文资料
SN74LVC1G86DBVR.A数据手册规格书PDF详情
1 Features
• ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 1000-V Charged-Device Model (C101)
• Qualified from –40°C to +125°C
• Supports 5-V VCC Operation
• Inputs Are Over Voltage Tolerant up to 5.5 V
• Supports Down Translation to VCC
• Maximum tpd of 4 ns at 3.3 V and 15-pF load
• Low Power Consumption, 10-μA Maximum ICC At
85°C
• ±24-mA Output Drive at 3.3 V
• Ioff Supports Partial-Power-Down Mode, and Back-
Drive Protection
• Available in the Texas Instruments
NanoFree™ Package
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
2 Applications
• Wireless Headsets
• Motor Drives and Controls
• TVs
• Set-Top Boxes
• Audio
3 Description
The SN74LVC1G86 device performs the Boolean
function Y = AB + AB in positive logic. This single 2-
input exclusive-OR gate is designed for 1.65-V to 5.5-
V VCC operation.
If the input is low, the other input is reproduced in
true form at the output. If the input is high, the signal
on the other input is reproduced inverted at the
output. This device has low power consumption with
maximum tpd of 4 ns at 3.3 V and 15-pF capacitive
load. The maximum output drive is ±32-mA at 4.5 V
and ±24-mA at 3.3 V.
This device is fully specified for partial-power-down
applications using Ioff. The Ioff circuitry disables the
outputs, preventing damaging current back flow
through the device when it is powered down.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
2023+ |
SOT23-5 |
50000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
|||
TI/德州仪器 |
23+ |
SOT-23-5 |
8080 |
正规渠道,只有原装! |
SN74LVC1G86DBVR.A 资料下载更多...
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Datasheet数据表PDF页码索引
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