1 Features

• Undershoot protection for off-isolation on A and B

ports up to −2 V

• Bidirectional data flow, with near-zero propagation

delay

• Low on-state resistance (ron) characteristics (ron =

3 Ω typical)

• Low input output capacitance minimizes loading

and signal distortion (Cio (OFF) = 8 pF typical)

• Data and control inputs provide undershoot clamp

diodes

• Low power consumption (ICC = 3 μA maximum)

• VCC operating range from 4 V to 5.5 V data I/Os

support 0 to 5-V signaling levels (0.8-V, 1.2-V, 1.5-

V, 1.8-V, 2.5-V, 3.3-V, and 5-V)

• Control inputs can be driven by TTL or 5-V/3.3-V

CMOS outputs

• Ioff supports partial-power-down mode operation

• Latch-up performance exceeds 100 mA per JESD

78, Class II

• ESD performance tested per JESD 22− 2000-V

Human-Body Model (A114-B, Class II)− 1000-V

Charged-Device Model (C101)

• Supports both digital and analog applications: PCI

interface, memory interleaving, bus isolation, lowdistortion

signal gating

2 Applications

• Enterprise servers

• Ethernet switches

• Routers

• Servers

• Industrial PCs

3 Description

The SN74CBT3383C is a high-speed TTL-compatible

FET bus-exchange switch with low ON-state

resistance (ron), allowing for minimal propagation

delay. Active Undershoot-Protection Circuitry on the

A and B ports of the SN74CBT3383C provides

protection for undershoot up to −2 V by sensing

an undershoot event and ensuring that the switch

remains in the proper OFF state.

The SN74CBT3383C is organized as a 10-bit bus

switch, or as a 5-bit bus-exchange switch with a

single output-enable (BE) input that provides data

exchanging between four signal ports. The select

(BX) input controls the data path of the bus-exchange

switch. When BE is low, the A port is connected to

the B port, allowing bidirectional data flow between

ports. When BE is high, a high-impedance state exists

between the A and B ports.