Output Voltage Translation Tracks VCC

Supports Mixed-Mode Signal Operation On

All Data I/O Ports

− 5-V Input Down To 3.3-V Output Level

Shift With 3.3-V VCC

− 5-V/3.3-V Input Down To 2.5-V Output

Level Shift With 2.5-V VCC

5-V-Tolerant I/Os With Device Powered Up

or Powered Down

Bidirectional Data Flow, With Near-Zero

Propagation Delay

Low ON-State Resistance (ron)

Characteristics (ron = 5 Ω Typical)

Low Input/Output Capacitance Minimizes

Loading (Cio(OFF) = 8 pF Typical)

Data and Control Inputs Provide

Undershoot Clamp Diodes

Low Power Consumption

(ICC = 20 μA Max)

VCC Operating Range From 2.3 V to 3.6 V

Data I/Os Support 0- to 5-V Signaling

Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V,

5 V)

Control Inputs Can Be Driven by TTL or

5-V/3.3-V CMOS Outputs

Ioff Supports Partial-Power-Down Mode

Operation

Latch-Up Performance Exceeds 250 mA Per

JESD 17

ESD Performance Tested Per JESD 22

− 2000-V Human-Body Model

(A114-B, Class II)

− 1000-V Charged-Device Model (C101)

Supports Digital Applications: Level

Translation, Memory Interleaving, Bus

Isolation

Ideal for Low-Power Portable Equipment

description/ordering information (continued)

The SN74CB3T3383 is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance

(ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data

I/O ports by providing voltage translation that tracks VCC. The SN74CB3T3383 supports systems using 5-V

TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels

(see Figure 1).

The SN74CB3T3383 is organized as a 10-bit bus switch or as a 5-bit bus-exchange with enable (BE) input.

When used as a 5-bit bus-exchange, the device provides data exchanging between four signal ports. When BE

is low, the bus-exchange switch is ON, and the select input (BX) controls the data path. When BE is high, the

bus-exchange switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that

damaging current will not backflow through the device when it is powered down. The device has isolation during

power off.

To ensure the high-impedance state during power up or power down, BE should be tied to VCC through a pullup

resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.